Publications

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SCI-Articles

2019

67 P. Narin, J. M. All Abbas, G. Atmaca, E. Kutlu, S. B. Lisesivdin, E. Ozbay "Ab initio study of electronic properties of armchair graphene nanoribbons passivated with heavy metal elements" Solid State Commun. 296, (2019).

66 P. Narin, E. Arslan, M. Ozturk, M. Ozturk, S. B. Lisesivdin, E. Ozbay "Scattering analysis of ultrathin barrier (< 7 nm) GaN-based heterostructures" Appl. Phys. A Mater. Sci. Process. 125, 278 (2019).

65 J. M. All Abbas, P. Narin, E. Kutlu, S. B. Lisesivdin, E. Ozbay "Electronic properties of Zigzag ZnO nanoribbons with Hydrogen and Magnesium passivations" Physica B 556, (2019).

2018

64 J.-H. Lee, J.-M. Ju, G. Atmaca, J.-G. Kim, S.-H. Kang, Y. S. Lee, S.-H. Lee, J.-W. Lim, H.-S. Kwon, S. B. Lisesivdin, J.-H. Lee “ High Figure-of-Merit (V2BR/RON) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier” IEEE J. Electron Dev. Soc. 6, 1179 (2018).

63 Ö. Ömeroğlu, E. Kutlu, P. Narin, S. B. Lisesivdin, E. Ozbay “Electronic Properties of Graphene Nanoribbons Doped with Zinc, Cadmium, Mercury Atoms” Physica E 104, 124 (2018).

62 G. Atmaca, P. Narin, E. Kutlu, T. V. Malin, V. G. Mansurov, K. S. Zhuravlev, S. B. Lisesivdin, E. Ozbay, “Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures” IEEE Trans. Electron Dev. 65, 950 (2018).

61 P. Narin, E. Kutlu, G. Atmaca, A. Atilgan, A. Yildiz. S. B. Lisesivdin, “Structural and optical properties of hexagonal ZnO nanostructures grown by ultrasonic spray CVD” Optik 168, 86 (2018).

60 E. Kutlu, P. Narin, S. B. Lisesivdin, E. Ozbay “Electronic and optical properties of black phosphorus doped with Au, Sn and I atoms” Philos. Mag. 98, 155 (2018).

2017

59 P. Narin, E. Kutlu, G. Atmaca, S. B. Lisesivdin, E. Ozbay “A first principles investigation of the effect of aluminum, gallium and indium impurities on optical properties of β-Si3N4 structure” Optik 147, 115 (2017).

58 J. M. Al Abbas, P. Narin, G. Atmaca, E. Kutlu, B. Sarikavak-Lisesivdin, S. B. Lisesivdin “The effect of doping in different layers on 2DEG for ultrathin-barrier AlN/GaN heterostructures” Optoelectron. Adv. Mater.-Rapid Comm. 11, 328 (2017).

57 J. M. All Abbas, G. Atmaca, P. Narin, E. Kutlu, B. Sarikavak-Lisesivdin, S. B. Lisesivdin “A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures” J. Elec. Mater. 46, 5278 (2017).

56 E. Kutlu, P. Narin, G. Atmaca, B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Ozbay “Electronic structure of β-Si3N4 crystals with substitutional icosagen group impurities” J. Optoelectron. Adv. Mater. 19, 278 (2017).

2016

55 P. Narin, E. Kutlu, B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Özbay "Electronic properties of Li-doped zigzag graphene nanoribbons" Physica E 84, 543 (2016).

54 E. Kutlu, P. Narin, G. Atmaca, B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Özbay "Effect of substitutional As impurity on electrical and optical properties of β−Si3N4 Structure" Mater. Res. Bull. 83, 128 (2016).

53 G. Atmaca, S. Ardali, E. Tiras, T. Malin, V. G. Mansurov, K. S. Zhuravlev, S. B. Lisesivdin "Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer" Solid-State Electron. 118, 12 (2016).

52 I. Kara, Y. Sarikavak, S. B. Lisesivdin, M. Kasap "Evaluation of Morphological and Chemical Differences of Gunshot Residues in Different Ammunitions Using SEM/EDS Technique" Environ. Foren. 17, 68 (2016).

51 G. Atmaca, P. Narin, B. Sarikavak-Lisesivdin, S. B. Lisesivdin "Two Dimensional Electron Gas in a Hybrid GaN/InGaN/ZnO Heterostructure with Ultrathin InGaN Channel Layer" Physica E 79, 67 (2016).

50 G. Atmaca, S. Ardali, P. Narin, E. Kutlu, S. B. Lisesivdin, T. Malin, V. Mansurov, K. Zhuravlev, E. Tiras "Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation" J. Alloys Compounds 659, 90 (2016).

2015

49 S. Ardali, G. Atmaca, S. B. Lisesivdin, T. Malin, V. Mansurov, K. Zhuravlev, E. Tiras "The variation of temperature dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation" Phys. Stat. Sol. B 252, 1960 (2015).

48 B. Sarikavak-Lisesivdin, S. B. Lisesivdin, N. Balkan, G. Atmaca, P. Narin, H. Cakmak, E. Ozbay "Energy relaxation of electrons in InGaN quantum wells" Metall. Mater. Trans. A 46, 1565 (2015).

47 G. Atmaca, P. Narin, B. Sarikavak-Lisesivdin, S. B. Lisesivdin, M. Kasap “Electron Transport Properties of Two Dimensional Electron Gas in BexZn1-xO/ZnO Heterostructures” Philos. Mag. 95, 79 (2015).

46 G. Atmaca, P. Tasli, G. Karakoc, E. Yazbahar and S. B. Lisesivdin “Numerical Investigation of the 2DEG Properties of AlGaN/AlN/GaN HEMT Structures with InGaN/GaN MQW Back-Barrier Structure” Physica E 65, 110 (2015).

2014

45 O. Donmez, F. Sarcan, S. B. Lisesivdin, M. P. Vaughan, A. Erol, M. Gunes, M. C. Arikan, J. Puustinen and M. Guina, "Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures" Semicond. Sci. Technol. 29, 125009 (2014).

44 S. B. Lisesivdin, G. Atmaca, E. Arslan, S. Cakmakyapan, O. Kazar, S. Butun, Jawad-ul-Hassan, E. Janzén and E. Ozbay “Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure” Physica E 63, 87 (2014).

43 E. Arslan, S. Cakmakyapan, O. Kazar, S. Bütün, S. B. Lisesivdin, N. A. Cinel, G. Ertas, S. Ardali, E. Tiras, J. Ul-Hassan, E.Janzén and Ekmel Özbay “SiC substrate effects on electron transport in the epitaxial Graphene layer” Electron. Mater. Lett. 10, 387 (2014).

42 S. B. Lisesivdin, N. A. Khan, S. Mazzucato, N. Balkan, M. J. Adams, V.-M. Korpijärvi, M. Guina, G. Mezosi and M. Sorel “Optical gain in 1.3 μm electrically-driven dilute nitride VCSOAs” Nanoscale Res. Lett. 9, 22 (2014).

2013

41 K. Elibol, G. Atmaca, P. Tasli, S. B. Lisesivdin “A Numerical Study on Subband Structure of InxAl1-xN/GaN-Based HEMT Structures with Low-Indium (x<0.10) Barrier Layer” Solid State Commun. 162, 8 (2013).

40 A. F. Kuloglu, B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Ozbay “First-principles calculations of Pd-terminated symmetrical armchair graphene nanoribbons” Comp. Mater. Sci. 68, 18 (2013).

39 B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Ozbay “The Effect of InxGa1-xN Back-barriers on the Dislocation Densities in Al0.31Ga0.69N/AlN/GaN/ InxGa1-xN/GaN Heterostructures (0.05 ≤ x ≤ 0.14)” Cur. Appl. Phys. 13, 224 (2013).

2012

38 B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Ozbay “Ab initio study of Ru-terminated and Ru-doped armchair graphene nanoribbons” Mol. Phys. 110, 2295 (2012).

37 E. Tiras, O. Celik, S. Mutlu, S. Ardali, S. B. Lisesivdin, E. Ozbay “Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures” Superlat. Microstruct. 51, 733 (2012).

36 O. Celik, E. Tiras, S. Ardali, S. B. Lisesivdin, E. Ozbay “Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN” Cent. Eur. J. Phys. 10, 485 (2012).

2011

35 O. Kelekci, S. B. Lisesivdin, S.Ozcelik, E. Ozbay “Numerical optimization of In-mole fraction and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barrier” Physica B 406, 1513 (2011).

34 A. Yildiz, P. Tasli, B. Sarikavak, S. B. Lisesivdin, M. K. Ozturk, M. Kasap, S. Ozcelik, E. Ozbay “Grain boundary related electrical transport in Al-rich AlxGa1-xN layers grown by metal organic chemical vapor deposition” Semiconductors+ 45, 33 (2011).

2010

33 H. Yu, S. B. Lisesivdin, B. Bolukbas, O. Kelekci, M. K. Ozturk, S. Ozcelik, D. Caliskan, M. Ozturk, H. Cakmak, P. Demirel ve E. Ozbay “Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1−xN HEMT based on a grading AlxGa1−xN buffer layer” Phys. Stat. Sol. a 207, 2593 (2010).

32 P. Tasli, B. Sarikavak, G. Atmaca, K. Elibol, A. F. Kuloglu ve S. B. Lisesivdin “Numerical Simulation of Novel Ultrathin Barrier n-GaN/InAlN/AlN/GaN HEMT Structures: Effect of In Mole Fraction, Doping and Layer Thicknesses” Physica B 405, 4020 (2010).

31 A. Bengi, S. B. Lisesivdin, M. Kasap, T. Mammadov, S. Ozcelik, E. Ozbay “Analysis of defect related optical transitions in AlGaN/GaN heterostructures” Mater. Sci. Semicond. Process. 13, 105 (2010).

30 S. B. Lisesivdin, A. Yildiz, N. Balkan, M. Kasap, S. Ozcelik, E. Ozbay “Scattering Analysis of Two-dimensional Electrons in AlGaN/GaN with Bulk Related Parameters Extracted by Simple Parallel Conduction Extraction Method” J. Appl. Phys. 108, 013712 (2010).

29 P. Tasli, A. Yildiz, M. Kasap, E. Ozbay, S. B. Lisesivdin ve S. Ozcelik “Contributions of the impurity band and electron–electron interactions to the magnetoconductance of AlGaN” Philos. Mag. 90, 3591 (2010).

28 S. B. Lisesivdin, P. Tasli, M. Kasap, M. Ozturk, E. Arslan, S. Ozcelik, ve E. Ozbay, “Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN Heterostructures with Low Indium Barrier (0.064 < x < 0.139)” Thin Solid Films 518, 5572 (2010).

27 A. Yildiz, S. B. Lisesivdin, M. Kasap, D. Mardare “The substrate temperature dependent electrical properties of titanium dioxide thin films” J. Mater. Sci.: Mater. Electron. 21, 692 (2010).

26 S. Gokden, R. Tulek, A. Teke, J. H. Leach, Q. Fan, J. Xie, U. Ozgur, H. Morkoc, S. B. Lisesivdin, E. Ozbay “Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with InGaN channel” Semicond. Sci. Technol. 25, 045024 (2010).

25 A. Yildiz, S. B. Lisesivdin, P. Tasli, E. Ozbay, ve M. Kasap “Determination of the critical indium composition corresponding to the metal-insulating transition in InxGa1-xN (0.06 < x < 0.135) layers” Curr. Appl. Phys. 10, 838 (2010).

24 A. Yildiz, S. B. Lisesivdin, M. Kasap, S. Ozcelik, E. Ozbay ve N. Balkan “Investigation of low temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with SPCEM” Appl. Phys. A 98, 557 (2010).

23 P. Tasli, S. B. Lisesivdin, A. Yildiz, M. Kasap, E. Arslan, E. Özbay, ve S. Özcelik “Well parameters of the two-dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD” Cryst. Res. Tech. 45, 133 (2010).

2009

22 S. B. Lisesivdin, E. Ozbay “Effect of various pseudomorphic AlN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In0.18Al0.82N/GaN based heterostructures” Optoelectron. Adv. Mater.: Rapid. Comm. 3, 904 (2009).

21 A. Yildiz, S. B. Lisesivdin, H. Altuntas, M. Kasap ve S. Ozcelik “Electrical conduction properties of Si δ-doped GaAs grown by MBE” Physica B 404, 4202 (2009).

20 G. Atmaca, K. Elibol, S. B. Lisesivdin, M. Kasap, E. Ozbay “Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)” J. Optoelectron. Adv. Mater. 11, 578 (2009).

19 A. Teke, S. Gökden, R. Tülek, J. H. Leach, Q. Fan, J. Xie, Ü. Özgür, H. Morkoç, S. B. Lisesivdin, E. Özbay, “The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures “ New J. Phys. 11, 063031 (2009).

18 S. B. Lisesivdin, N. Balkan, O. Makarovsky, A. Patanè, A. Yildiz, M. D. Caliskan, M. Kasap, S. Ozcelik, E. Ozbay “Large Zero-Field Spin Splitting in AlGaN/AlN/GaN/AlN Heterostructures” J. Appl. Phys. 105, 093701 (2009).

17 S. B. Lisesivdin, H. Altuntas, A. Yildiz, M. Kasap, E. Ozbay, S. Ozcelik, “DX-center Energy Calculation with Quantitative Mobility Spectrum Analysis in n-AlGaAs/GaAs Structures with Low Al Content” Superlatt. Microstruct. 45, 604 (2009).

16 A. Yildiz, S. B. Lisesivdin, M. Kasap, D. Mardare “Non-adiabatic Small Polaron Hopping Conduction in Nb-doped TiO2 thin films” Physica B 404, 1423 (2009).

15 Y. Sun, N. Balkan, M. Aslan, S. B. Lisesivdin, H. Carrere, M. C. Arikan, X. Marie “Electronic transport in n- and p-type modulation doped GaxIn1-xNyAs1-y/GaAs Quantum Wells” J. Phys: Condens. Matt. 21, 174210 (2009) Invited Article.

14 S. B. Lisesivdin, N. Balkan, E. Ozbay “A Simple Parallel Conduction Extraction Method (SPCEM) for MODFETs and Undoped GaN-based HEMTs” Microelectron. J. 40, 413 (2009).

13 A. Yildiz, S. B. Lisesivdin, M. Kasap, M. Bosi “Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N” Solid State Commun. 149, 337 (2009).

2008

12 A. Yildiz, S. B. Lisesivdin, M. Kasap, D. Mardare “Electrical Properties of TiO2 Thin Films” J. Non-Crys. Solids 354, 4944 (2008).

11 S. B. Lisesivdin, S. Demirezen, M. D. Caliskan, A. Yildiz, M. Kasap, S. Ozcelik ve E. Ozbay “Growth parameters investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall Effect Measurements” Semicond. Sci. Technol. 23, 095008 (2008).

10 E. Arslan, S. Butun, S. B. Lisesivdin, M. Kasap, S. Ozcelik, ve E. Ozbay “The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates” J. Appl. Phys. 103, 103701 (2008).

9 S. Acar, S. B. Lisesivdin, M. Kasap, S. Ozcelik ve E. Ozbay “Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition” Thin Solid Films 516, 2041 (2008).

8 A. Yildiz, F. Dagdelen, S. Acar, S. B. Lisesivdin, M. Kasap, Y. Aydogdu ve M. Bosi “Stokes shift and bandgap bowing in InxGa1-xN (0.060 ≤ x ≤ 0.105) grown by MOVPE” Acta Physica Pol. (a) 113, 731 (2008).

7 S. B. Lisesivdin, E. Arslan, M. Kasap, S. Ozcelik ve E. Ozbay, “Self-consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates using photo-Hall effect measurements” J. Phys.: Condens. Matt. 20, 045208 (2008).

2007

6 S. B. Lisesivdin, A. Yildiz ve M. Kasap, “Optimization of alloy composition, interlayer and barrier thicknesses in AlxGa1-xN/(AlN)/GaN high electron mobility transistors” Opt. Adv. Mater.-Rapid Comm. 1 (9), 467 (2007).

5 A. Yildiz, S. B. Lisesivdin, M. Kasap, D. Mardare “High temperature variable-range hopping conductivity in undoped TiO2 thin film” Opt. Adv. Mater.-Rapid Comm. 1 (10), 531 (2007).

4 A. Yildiz, S. B. Lisesivdin, S. Acar, M. Kasap ve M. Bosi, “Electron transport in Ga-rich InxGa1-xN alloys” Chin. Phys. Lett. 24, 2930 (2007).

3 S. B. Lisesivdin, A. Yildiz, S. Acar, M. Kasap, S. Ozcelik ve E. Ozbay “The Effect of Strain Relaxation on Electron Transport in Undoped Al0.25Ga0.75N/GaN HEMT Structures” Physica B 399 (2), 132 (2007).

2 S. B. Lisesivdin, A. Yildiz, S. Acar, M. Kasap, S. Ozcelik ve E. Ozbay “Electronic Transport Characterization of AlGaN/GaN HEMT Structures grown by MOCVD” Appl. Phys. Lett. 91, 102113 (2007). Selected for Virtual Journal of Nanoscale Science & Technology 16 12 (2007).

1 S. B. Lisesivdin, S. Acar, M. Kasap, S. Ozcelik, S. Gokden ve E. Ozbay “Scattering Analysis of Extracted 2D carrier in AlGaN/GaN HEMT Structures” Semicond. Sci. Technol. 22, 543 (2007).


SCI Technical Notes

2015

1 I. Kara, S. B. Lisesivdin, M. Kasap, E. Er, U. Uzek "The Relationship between the Surface Morphology and Chemical Composition of Gunshot Residue Particles" J. Foren. Sci. 60, 1030 (2015).


Non-SCI Articles

2011

1 O. Celik, E. Tiras, S. Ardali, S. B. Lisesivdin, E.Ozbay “Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs” Phys. Stat. Sol. (c) 8, 1625 (2011).


Books and Book Chapters

2016

2 S. B. Lisesivdin, B. Sarikavak-Lisesivdin, E. Ozbay “Chapter 18: The Effects of the Interaction of Transition Metals on the Electronic Properties of the Graphene Nanosheets and Nanoribbons” Graphene Science Handbook Vol.3, CRCPress, Taylor&Francis, (2016).

2014

1 E. L. Wolf, M. Medikonda, (Transl. eds: B. Sarikavak-Lisesivdin, S. B. Lisesivdin) “Nanoteknoloji Devrimini Anlamak” Nobel Press, (2014).


PhD dissertations

1 G. Atmaca, (Gazi University, Institute of Science, Physics), Investigations of low-field transport and hot-electron transport in passivated AlGaN/GaN hemts with Si3N4, 2013 - 2018.

MSc theses

10 O. Omeroglu, (Gazi University, Institute of Science, Physics), Investigation of the Electronic Properties of Zn, Cd and Hg-doped Graphene Sheets with Ab-Initio Methods, 2016 - 2018.

9 R. Ibrahem, (Gazi University, Institute of Science, Physics), Investigation of Electronic and Optical Properties of Wurtzite MgZnO with First Principles Calculations, 2016 - 2018.

8 M. Ozturk, (Gazi University, Institute of Science, Physics), Electrical Characteristics and Scattering Analysis of Ultrathin Barrier GaN-Based High Electron Mobility Transistors, 2015 - 2018.

7 J. M. M. J. Al-Abbas, (Gazi University, Institute of Science, Physics),Simulation and optimation of GaN-based ultrathin barrier high electron mobility transistors, 2014 - 2016.

6 E. Kutlu, (Gazi University, Institute of Science, Physics), Investigation of the effects of Cadmium Doping on Electronic and Optical Properties of Graphene Nanoribbons, 2014 -2016.

5 A. F. Kuloglu, (Gazi University, Institute of Science, Physics), Investigation of Electronic Properties of Pa-terminated Graphene Nanoribbons, 2010-2012.

4 G. Atmaca, (Gazi University, Institute of Science, Physics), Numerical Investigation of the 2-Dimensional Carriers in AlQN/AlN/GaN-Based (Q=Ga, In) Transistors with Multi-Quantum Well Back-Barriers, 2010-2012.

3 K. Elibol, (Gazi University, Institute of Science, Physics), Investigation of Magnetoconductivity and Surface Properties of Exfoliated and Epitaxially Grown Graphene Samples, 2010-2012.

2 G. Karakoc, (Gazi University, Institute of Science, Physics), Investigating the Electron Transport Properties of AlInN/AlN/(InGaN)/GaN Heterostructures with InGaN Quantum Wells. 2009-2012.

1 C. Gunes, (Gazi University, Institute of Science, Physics), Electron and magnetotransport investigation of two dimensional electron gas in ultrathin barrier GaN-based heterostructures. 2009-2012.