Project SiNonGaN


TUBITAK 2532 Joint Research Project

View the Project on GitHub lrgresearch/sinongan

SINONGAN - Modification of properties of two-dimensional electronic gas using insitu surface passivation of AlGaN/GaN heterostructures by molecular beam epitaxy

Project Information

Project Description


In recent years, the implementation of III–V-nitride compound semiconductors into optoelectronic and electronic devices has become an impressive success story. In the development of this very successful technology, the knowledge basis for the application of wurtzite nitride heterostructures to advanced optical and electronic devices requires an understanding of the electronic properties of their surface and interfaces and also their interplay with the polarization charges at the heterojunctions, which characterize the wurtzite III-N heterostructures as compared with the classical zincblende III–V ones. A number of problems still hamper further development most notably, a lack of understanding of the origin and ensuing lack of control of the two-dimensional electron gas (2DEG) in undoped AlGaN/GaN heterostructures and the phenomenon of current collapse in high-frequency transistor devices, which may result in issues related to noise, power loss, and reliability. Among several mechanisms, the most widely accepted one is that the 2DEG originates from donor states on the AlGaN surface, moreover, surface states are responsible for current degradation of transistor devices. Much attention has been focused on the reduction of parasitic surface states using different passivation dielectrics, the one of the most promising one is the SiN in situ grown by molecular beam epitaxy (MBE) without exposing the semiconductor surface to the air environment. However, in spite of demonstration of encouraging effectiveness of in situ SiN passivation its mechanisms is ill understood.

We propose a two-year international collaboration project on investigation of mechanisms of in situ surface passivation of AlGaN/GaN heterostructures with 2DEG by molecular beam epitaxy. The collaboration consists of a research team led by Prof. Dr. K.S.Zhuravlev in Rzhanov Institute of Semiconductor Physics (Novosibirsk, Russia) and a team led by Assoc. Prof. Dr. S. B.Lisesivdin in Gazi University (Ankara, Turkey).


Objectives of the theoretical study:

Objectives of the experimental study:

Project Consortium

Project Team

Other Colleagues, Students and Collaborations

Project Structure

Project News*

January 2022

June 2018

May 2017

September 2016

December 2015

April 2014

*: Project site is prepared after project was finished.